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FDA18N50

Manufacturer:

On Semiconductor

Mfr.Part #:

FDA18N50

Datasheet:
Description:

MOSFETs TO-3PN Through Hole N-Channel number of channels:1 239 W 500 V Continuous Drain Current (ID):19 A 60 nC

ParameterValue
Length15.8 mm
Width5 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance265 MΩ
Height18.9 mm
PackagingTube
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation239 W
Power Dissipation239 W
Threshold Voltage5 V
Number of Channels1
Input capacitance2.86 nF
Continuous Drain Current (ID)19 A
Rds On Max265 mΩ
Drain to Source Voltage (Vdss)500 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time55 ns
Turn-Off Delay Time95 ns
Element ConfigurationSingle
Fall Time90 ns
Rise Time165 ns
Gate Charge60 nC
Drain to Source Resistance265 mΩ
Gate to Source Voltage (Vgs)30 V
Drain to Source Breakdown Voltage (Vds)500 V
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Gate to Source Threshold Voltage3 V

Stock: 55

Distributors
pcbx
Unit Price$2.61600
Ext.Price$2.61600
QtyUnit PriceExt.Price
1$2.61600$2.61600
10$2.22230$22.22300
25$2.02652$50.66300
50$1.84799$92.39950
100$1.68518$168.51800
300$1.53672$461.01600
500$1.40136$700.68000